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Totalmente electrónico resuelto nanosegundo túnel microscopía: Facilitar la investigación de Dopant solo carga dinámica
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January 19, 2018
DOI:
1Department of Physics,University of Alberta, 2National Institute for Nanotechnology,National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5Department of Physics and Astronomy,University of Manitoba, 6Joint Attosecond Science Laboratory,University of Ottawa
Summary
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Demostrar un método totalmente electrónico para observar la dinámica de carga resuelto nanosegundo de los átomos del dopant en silicio con un microscopio de efecto túnel.
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Rashidi, M., Vine, W., Burgess, J. A., Taucer, M., Achal, R., Pitters, J. L., Loth, S., Wolkow, R. A. All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics. J. Vis. Exp. (131), e56861, doi:10.3791/56861 (2018).
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