Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Julia I. Deitz; Santino D. Carnevale; Steven A. Ringel; David W. McComb; Tyler J. Grassman

doi:10.3791/52745

Journal

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Engineering

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Electron Canalisation imagerie de contraste pour Rapid III-V hétéroépitaxiale Caractérisation

JoVE Journal
Engineering

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JoVE Journal Engineering

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Electron Canalisation imagerie de contraste pour Rapid III-V hétéroépitaxiale Caractérisation

10,803 Views

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07:50 min

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July 17, 2015

DOI:

10.3791/52745-v

DOI:

10.3791/52745-v

•

07:50 min

July 17, 2015

•

9 Views

Julia I. Deitz¹, Santino D. Carnevale², Steven A. Ringel³, David W. McComb³, Tyler J. Grassman^1,2

¹Department of Materials Science and Engineering,The Ohio State University, ²Department of Electrical and Computer Engineering,The Ohio State University, ³Institute of Materials Research,The Ohio State University

Summary

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

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Electron Canalisation imagerie de contraste pour Rapid III-V hétéroépitaxiale Caractérisation

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