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In Situ Tijdafhankelijk Diëlektrische Breakdown in de Transmission Electron Microscope: een mogelijkheid om het faalmechanisme in Microelectronic Devices Begrijp
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Tijdafhankelijk Diëlektrische Breakdown in de Transmission Electron Microscope: een mogelijkheid om het faalmechanisme in Microelectronic Devices Begrijp

Nederlands

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8,539 Views

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09:26 min

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June 26, 2015

DOI:

10.3791/52447-v

DOI:
10.3791/52447-v

•

09:26 min
June 26, 2015

•

1 Views
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1Fraunhofer Institute for Ceramic Technologies and Systems, 2Dresden Center for Nanoanalysis,Technische Universität Dresden, 3Globalfoundries Fab 8, 4Globalfoundries Fab 1

Summary

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The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.

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Cite this Article

Liao, Z., Gall, M., Yeap, K. B., Sander, C., Clausner, A., Mühle, U., Gluch, J., Standke, Y., Aubel, O., Beyer, A., Hauschildt, M., Zschech, E. In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices. J. Vis. Exp. (100), e52447, doi:10.3791/52447 (2015).

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