Journal
/
Engineering
/
Fabbricazione di cavità uniformi su nanoscala tramite silicon direct wafer bonding
JoVE Journal
Engineering
A subscription to JoVE is required to view this content.  Sign in or start your free trial.
JoVE Journal Engineering
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Please note that all translations are automatically generated. Click here for the English version.

Fabbricazione di cavità uniformi su nanoscala tramite silicon direct wafer bonding

italiano

Automatically Generated

6,201 Views

•

10:32 min

•

January 09, 2014

DOI:

10.3791/51179-v

DOI:
10.3791/51179-v

•

10:32 min
January 09, 2014

•

1 Views
, , , ,
1Department of Physics,The State University of New York at Buffalo, 2Joint Quantum Institute,University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, 5HRL Laboratories

Summary

Automatically generated

Viene descritto un metodo per legare permanentemente due wafer di silicio in modo da realizzare un involucro uniforme. Ciò include i processi di preparazione, pulizia, incollaggio RT e ricottura del wafer. I wafer legati risultanti (cellule) hanno uniformità di involucro ~1%1,2. La geometria risultante consente di misurazioni di liquidi e gas confinati.

Explore More Videos

Silicon Direct Wafer BondingNanoscale CavitiesConfined 4HeLambda TransitionUniform ConfinementThermal OxideLithographic PatterningRCA CleaningHigh-temperature AnnealingThermal And Hydrodynamic Properties

Read Article

Cite this Article

Thomson, S. R. D., Perron, J. K., Kimball, M. O., Mehta, S., Gasparini, F. M. Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding. J. Vis. Exp. (83), e51179, doi:10.3791/51179 (2014).

Download .ris file

Copy

Share Video

.

Copy