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通过雕刻包含可重入和双重入的腔或柱的气体镶入微纹理来渲染 SiO2/Si 曲面全功能性
JoVE Journal
Engenharia
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JoVE Journal Engenharia
Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
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通过雕刻包含可重入和双重入的腔或柱的气体镶入微纹理来渲染 SiO2/Si 曲面全功能性

DOI:
10.3791/60403-v

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08:02 min

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February 11, 2020

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, , , , , ,
1Water Desalination and Reuse Center (WDRC), Biological and Environmental Science and Engineering (BESE) Division,King Abdullah University of Science and Technology (KAUST), 2Core Labs,King Abdullah University of Science and Technology (KAUST)

Capítulos

  • 00:04Introduction
  • 01:08Cavity Design and Wafer Cleaning
  • 02:17Photolithography
  • 03:15Silica (SiO2) and Silicon (Si) Layer Etching
  • 04:30Thermal Oxide Growth and Etching
  • 06:00Results: Representative Wetting Behaviors of Gas-Entrapping Microtextures (GEMs)
  • 07:08Conclusion

Summary

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Tadução automática

本作品提出了微加工方案，用于使用光刻和干蚀刻在SiO 2/Si晶圆上实现具有可重入和双重入型的腔和柱。产生的微纹理表面表现出显著的液体排斥性，其特点是在润湿液体下对空气进行长期粘固，尽管二氧化硅具有固有的润湿性。

Tags

SiO2/Si SurfacesOmniphobicGas-entrapping MicrotexturesReentrant CavitiesDoubly Reentrant CavitiesPillarsPhotolithographyDry EtchingMicrofabricationSilicon WaferThermal OxidePiranha SolutionHexamethyldisilazanePhotoresistSpin CoatingUV Exposure

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