/
/
Cuasi-van der Waals asistida por grafeno epitaxy de película alN sobre sustrato de zafiro nano-patrón para diodos emisores de luz ultravioleta
É necessária uma assinatura da JoVE para visualizar este conteúdo. Faça login ou comece sua avaliação gratuita.
Cuasi-van der Waals asistida por grafeno epitaxy de película alN sobre sustrato de zafiro nano-patrón para diodos emisores de luz ultravioleta
6,998 Views
•
07:00 min
•
June 25, 2020
DOI:
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University
Summary
Automatically generated
Se presenta un protocolo para el crecimiento asistido por grafeno de películas AlN de alta calidad en sustrato de zafiro nano-patrón.
Read Article
Cite this Article
Zhang, X., Chen, Z., Chang, H., Yan, J., Yang, S., Wang, J., Gao, P., Wei, T. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. J. Vis. Exp. (160), e60167, doi:10.3791/60167 (2020).
Copy