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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
章
- 00:05標題
- 01:20Derivatization and Characterization of Silicon Wafer Surfaces
- 02:14Gold Nanoparticle (GNP) Deposition into E-beam-patterned Holes
- 03:46Pol(methyl methacrylate) (PMMA) Photoresist Reflow and Dry- and Wet-etching
- 04:50Results: Reduction of Shot-noise by Deposition and Subsequent Etching of Sacrificial GNPs
- 06:29Conclusion
Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.
