בפילוח של טרנספורמטור Situ זמן תלוי בהילוכי אלקטרונים מיקרוסקופים: אפשרות להבין את מנגנון הכשל בהתקני מייקרו-אלקטרוניים
8,539 Views
•
09:26 min
•
June 26, 2015
DOI:
Summary
Automatically generated
The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.
Read Article
Cite this Article
Liao, Z., Gall, M., Yeap, K. B., Sander, C., Clausner, A., Mühle, U., Gluch, J., Standke, Y., Aubel, O., Beyer, A., Hauschildt, M., Zschech, E. In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices. J. Vis. Exp. (100), e52447, doi:10.3791/52447 (2015).
Copy