在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触
Summary
在本协议中,我们描述了在CIGS薄膜太阳能电池中制造银纳米线网络和CdS缓冲层之间强健纳米级接触的详细实验过程。
Abstract
银纳米线透明电极已作为Cu(In,Ga)Se2薄膜太阳能电池的窗口层。裸银纳米线电极通常会导致电池性能极差。使用中等导电性透明材料(如氧化锡或氧化锌)嵌入或夹层银纳米线可以提高电池性能。但是,溶液处理的基质层会导致透明电极和 CdS 缓冲液之间的大量界面缺陷,最终导致电池性能低下。本手稿描述了如何在 Cu(In,Ga) Se2太阳能电池中制造银纳米线电极与底层 CdS 缓冲层之间的强健电气接触,使用无基质银纳米线透明,实现高电池性能电极。我们采用的方法制造的无基质银纳米线电极证明,银纳米线电极基电池的电荷载体收集能力与具有溅射ZnO:Al/i-ZnO的标准电池的电荷载体收集能力一样好,只要银纳米线和CdS 具有高质量的电气触点。通过在银纳米线表面上沉积一层薄至 10 nm 的额外 CdS 层,实现了高质量的电气接触。
Introduction
银纳米线 (AgNW) 网络作为氧化锡 (ITO) 透明导电薄膜的替代品得到了广泛的研究,因为它在降低加工成本和更好的机械灵活性。因此,经过解决方案处理的 AgNW 网络透明导电电极 (TE) 已应用于 Cu(In、Ga)Se2 (CIGS) 薄膜太阳能电池 1、2、3、4、5,6.溶液加工的AgNW CTCEs通常以嵌入式AgNW或三明治-AgNW结构的形式制成,采用导电基质,如PEDOT:PSS、ITO、ZnO等7、8、9、 10,11矩阵层可以增强 AgNW 网络空白空间中电荷载体的收集。
然而,基质层在CIGS薄膜太阳能电池12、13中的基质层和底层CdS缓冲层之间会产生界面缺陷。界面缺陷通常会导致电流密度-电压 (J-V) 曲线扭结,导致电池中的填充系数 (FF) 低,这不利于太阳能电池的性能。我们之前报告了一种方法,通过有选择地在 AgGW 和 CdS 缓冲层14之间沉积另一个薄 CdS 层(第 2层CdS 层)来解决此问题。附加 CdS 层的加入增强了 AgNW 和 CdS 图层之间的连接中的接触属性。因此,AgNW网络中的载波集合得到了极大的改进,并且提高了信元性能。在本协议中,我们描述了在 CIGS 薄膜太阳能电池中使用第二 CdS 层在 AgNW 网络和 CdS缓冲层之间制造强健电气接触的实验过程。
Protocol
Representative Results
Discussion
请注意,必须优化第 2层CdS 层的沉积时间,以实现最佳的单元性能。随着沉积时间的延长,第2CdS层的厚度增加,因此,电气接触将得到改善。然而,第2CdS层的进一步沉积将导致更厚的层,减少光吸收,并且设备效率将下降。我们在第二CdS层的沉积时间为10分钟,实现了最佳的细胞性能,并确定了细胞效率降低,沉积时间延长。
为了评估我们的方法,我们比较?…
Divulgaciones
The authors have nothing to disclose.
Acknowledgements
这项研究得到了韩国能源研究所(B9-2411)的内部研发计划(B9-2411)和基础科学研究计划的支持,该计划由韩国国家研究基金会(NRF)资助。教育 (授予 NRF-2016R1D1A1B03934840)。
Materials
| Mo | Materion | Purity: 3N5 | Mo sputtering |
| Cu | 5N Plus | Purity: 4N7 | CIGS deposition |
| In | 5N Plus | Purity: 5N | CIGS deposition |
| Ga | 5N Plus | Purity: 5N | CIGS deposition |
| Se | 5N Plus | Purity: 5N | CIGS deposition |
| Ammonium acetate | Alfa Aesar | 11599 | CdS reaction solution |
| Ammonium hydroxide | Alfa Aesar | L13168 | CdS reaction solution |
| Cadmium acetate dihydrate | Sigma-Aldrich | 289159 | CdS reaction solution |
| Thiourea | Sigma-Aldrich | T8656 | CdS reaction solution |
| Silver Nanowire | ACSMaterial | AgNW-L30 | AgNW dispersion |
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