Diodes

An ideal diode is a nonlinear circuit element with the anode as its positive terminal and the cathode as its negative terminal. When a negative voltage is …

A diode is forward-biased when its p-type region is connected to the positive terminal of the supply voltage and its n-type region is connected to the …

A diode is reverse-biased when its n-type region is connected to the positive terminal of the supply voltage and its p-type region is connected to the …

Like regular diodes, a Zener diode allows current to flow in forward-bias and blocks current in reverse bias. However, if the reverse bias voltage exceeds …

Modeling the forward characteristics of a diode involves analyzing a forward-biased diode circuit. This analysis can be performed using two models: the …

In a diode circuit, a DC bias voltage drives the diode current through a resistor, exhibiting exponential behavior in the current-voltage characteristic …

Modeling the reverse characteristics of a diode involves examining a reverse-biased diode circuit. Consider a Zener diode circuit possessing a breakdown …

A diode rectifier circuit converts AC voltage into a unidirectional DC voltage using either half-wave or full-wave configurations. Consider a half-wave …

Consider a full-wave rectifier circuit comprising a center-tapped transformer, two diodes in a center-tapped configuration, and a load resistor. The …

The bridge rectifier, vital for converting AC to DC, consists of four diodes arranged in a bridge configuration. This arrangement enables it to rectify …

A clipper circuit is a wave-shaping tool that uses diodes to modify waveforms. These circuits are common in TVs, radar transmitters, and receivers. …

A clamper circuit consists of a time-varying input signal, a capacitor, and a diode. The output voltage is measured across the diode. During the negative …

Consider a voltage doubler circuit composed of two consecutive sections: a clamping section and a rectifier section. The clamping section comprises a …

Schottky barrier diodes are semiconductor devices formed by joining a metal layer with a moderately doped n-type semiconductor material. When a metal …