In Situ Zeitabhängige Dielectric Breakdown im Transmissionselektronenmikroskop: eine Möglichkeit, die Fehlermechanismus in mikroelektronischen Bauelementen Verstehen
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June 26, 2015
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The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.
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Liao, Z., Gall, M., Yeap, K. B., Sander, C., Clausner, A., Mühle, U., Gluch, J., Standke, Y., Aubel, O., Beyer, A., Hauschildt, M., Zschech, E. In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices. J. Vis. Exp. (100), e52447, doi:10.3791/52447 (2015).
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